| PART |
Description |
Maker |
| MAX4634 MAX4634ETB MAX4634EUB |
Fast, Low-Voltage, 4 Ohm, 4-Channel CMOS Analog Multiplexer 4-CHANNEL, SGL ENDED MULTIPLEXER, PDSO10
Fast / Low-Voltage / 4 / 4-Channel CMOS Analog Multiplexer
Fast, Low-Voltage, 4, 4-Channel CMOS Analog Multiplexer
Fast, Low-Voltage, 4з, 4-Channel CMOS Analog Multiplexer
Fast, Low-Voltage, 4? 4-Channel CMOS Analog Multiplexer
|
MAXIM - Dallas Semiconductor
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
|
| IDT74FCT139 IDT74FCT139A IDT74FCT139AD IDT74FCT139 |
DIODE ZENER SINGLE 350mW 3.3Vz 20mA-Izt 0.05 25uA-Ir 1 SOT-23 3K/REEL 快速CMOS中，4解码器，具备启动
FAST CMOS DUAL 1-OF-4 DECODER WITH ENABLE 有“使能”的快速CMOS译码
FAST CMOS DUAL 1-OF-4 DECODER WITH ENABLE
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
Integrated Device Techn...
|
| AS4C4M4F1 AS4C4M4F0 |
5V 4M×4 CMOS DRAM （Fast Page Mode)(5V 4M×4 CMOS 动态RAM（快速页面模式）)
|
Alliance Semiconductor Corporation
|
| MB81V17800A-60L |
CMOS 2 M ×8 BIT Fast Page Mode DRAM(CMOS 2 M ×8 位快速页面存取模式动态RAM) 的CMOS 2米8位快速页面模式的DRAM的CMOS2米8位快速页面存取模式动态内存）
|
Fujitsu, Ltd.
|
| K4F160412D K4F160411D-BL50 |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode 4米4位的CMOS动态随机存储器的快速页面模
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
|
Samsung Semiconductor Co., Ltd.
|
| MB814260-70 MB814260-60 |
CMOS 256K ×16 BIT
FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM)
CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM) 的CMOS 256K × 16位快速页面模式的动态随机存储器（的CMOS 256K × 16位快速页面存取模式动态内存）
CMOS 256K ?16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ?16 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited
Fujitsu, Ltd.
|
| AS4C4M4F1Q-50TC AS4C4M4F1Q-60TC AS4C4M4F1Q-60JC |
DRAM|FAST PAGE|4MX4|CMOS|SOJ|28PIN|PLASTIC
DRAM|FAST PAGE|4MX4|CMOS|TSOP|28PIN|PLASTIC
4M X 4 FAST PAGE DRAM, 60 ns, PDSO28
|
ALLIANCE SEMICONDUCTOR CORP
|
| FAN2514_FAN2515 FAN2514X27 FAN2514X25 FAN2514X285 |
VOLT REGULATOR|FIXED| 2.6V|CMOS|TSOP|6PIN|PLASTIC 电压调节器|定额| 2.6V的|的CMOS |的TSOP | 6针|塑料
From old datasheet system
200 mA CMOS LDO Regulators with Fast Start Enable
|
Toshiba, Corp.
Fairchild Semiconductor
|
| KM48C2100B KM48V2100B KM48C2000B KM48V2000B KM48C2 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70ns
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IDT54FCT2374ATQ IDT54FCT2374ATQB IDT74FCT2374ATQ I |
Fast CMOS octal D register (3-state)
CAP 0.039UF 100V 10% X7R SMD-1206 TR-7-PL SN-NIBAR 快速CMOS八路D寄存器（3态）
FAST CMOS OCTAL D REGISTERS (3-STATE) 快速CMOS八路D寄存器（3态）
CAP 1UF 16V 5% Y5V SMD-0805 TR-7-PL SN-NIBAR FCT SERIES, 8-BIT DRIVER, TRUE OUTPUT, PDSO20
CAP 0.47UF 200V 20% X7R SMD-2225 TR-7-PL SN-NIBAR
|
INTEGRATED DEVICE TECHNOLOGY INC
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| K4F160411D K4F160412D K4F170411D K4F170412D K4F160 |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4F151611 K4F151611D K4F151612D K4F171611D K4F1716 |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle.
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
